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DRAM Chip EDB1316BDBH-1DIT-F-D TR
Micron Technology
EDB1316BDBH-1DIT-F-D TR
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| DRAM Type | Mobile LPDDR2 SDRAM |
| ECCN (US) | EAR99 |
| Packaging | Dry |
| Part Status | LTB |
| Organization | 64Mx16 |
| Interface Type | HSUL |
| Chip Density (bit) | 1G |
| Data Bus Width (bit) | 16 |
| Operating Current (mA) | 155 |
| Address Bus Width (bit) | 13 |
| Maximum Access Time (ns) | 5.5 |
| Maximum Clock Rate (MHz) | 533 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 8M |
| Number of Bits/Word (bit) | 16 |
| Number of I/O Lines (bit) | 16 |
| Supplier Temperature Grade | Industrial |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 1.3|1.95 |
| Minimum Operating Supply Voltage (V) | 1.14|1.7 |
| Typical Operating Supply Voltage (V) | 1.2|1.8 |
| Description |
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