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K4A4G165WF-BCWE
K4A4G165WF-BCWE
DRAM Chip K4A4G165WF-BCWE
Samsung Electronics
K4A4G165WF-BCWE
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
PCB changed96
Part StatusUnconfirmed
Organization256Mx16
Package Width7.5
Interface TypePOD
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)16
Maximum Clock Rate (MHz)3200
Number of Internal Banks16
Number of Words per Bank16M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)0
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA
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