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K4A8G165WB-BIWE
K4A8G165WB-BIWE
DRAM Chip K4A8G165WB-BIWE
Samsung Electronics
K4A8G165WB-BIWE
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
PCB changed96
Part StatusActive
Organization512Mx16
Supplier PackageFBGA
Chip Density (bit)8G
Data Bus Width (bit)16
Maximum Clock Rate (MHz)3200
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
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