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K4A8G165WC-BCRCTCV
K4A8G165WC-BCRCTCV
DRAM Chip K4A8G165WC-BCRCTCV
Samsung Electronics
K4A8G165WC-BCRCTCV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
DRAM TypeDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
PCB changed96
Part StatusActive
Organization512Mx16
Package Width7.5
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)8G
Data Bus Width (bit)16
Maximum Clock Rate (MHz)2400
Number of I/O Lines (bit)16
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)0
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
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