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K4B1G0846I-BCK0000
K4B1G0846I-BCK0000
DRAM Chip K4B1G0846I-BCK0000
Samsung Electronics
K4B1G0846I-BCK0000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
Pin Count78
AutomotiveNo
PCB changed78
Part StatusActive
Organization128Mx8
Package Width7.5
Interface TypeSSTL_1.5
Package Length11
Supplier PackageFBGA
Chip Density (bit)1G
Data Bus Width (bit)8
Operating Current (mA)77
Address Bus Width (bit)17
Maximum Clock Rate (MHz)1600
Number of Internal Banks8
Number of Words per Bank16M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 1Gbit 128Mx8 1.5V 78-Pin FBGA
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