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DRAM Chip K4B2G0846F-BYK0000
Samsung Electronics
K4B2G0846F-BYK0000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization256Mx8
Chip Density (bit)2G
Data Bus Width (bit)8
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)8
Maximum Operating Supply Voltage (V)1.575|1.45
Minimum Operating Supply Voltage (V)1.425|1.283
Typical Operating Supply Voltage (V)1.5|1.35
Description
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V/1.5V
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