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DRAM Chip K4B2G0846F-BYMATCV
Samsung Electronics
K4B2G0846F-BYMATCV
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| DRAM Type | DDR3L SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 78 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 78 |
| Part Status | Active |
| Organization | 256Mx8 |
| Package Width | 7.5 |
| Package Length | 11 |
| Supplier Package | FBGA |
| Chip Density (bit) | 2G |
| Data Bus Width (bit) | 8 |
| Standard Package Name | BGA |
| Operating Current (mA) | 90 |
| Address Bus Width (bit) | 18 |
| Maximum Access Time (ns) | 0.195 |
| Maximum Clock Rate (MHz) | 1866 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 32M |
| Number of Bits/Word (bit) | 8 |
| Number of I/O Lines (bit) | 8 |
| Supplier Temperature Grade | Commercial |
| Maximum Operating Temperature (°C) | 95 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Supply Voltage (V) | 1.45|1.575 |
| Minimum Operating Supply Voltage (V) | 1.425|1.283 |
| Typical Operating Supply Voltage (V) | 1.35|1.5 |
| Description |
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