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K4B4G0846D-BCH90CV
K4B4G0846D-BCH90CV
DRAM Chip K4B4G0846D-BCH90CV
Samsung Electronics
K4B4G0846D-BCH90CV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
Pin Count78
AutomotiveNo
Lead ShapeBall
PCB changed78
Part StatusActive
Organization512Mx8
Package Width7.5
Interface TypeSSTL_1.5
Package Length11
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)8
Standard Package NameBGA
Operating Current (mA)131
Address Bus Width (bit)19
Maximum Access Time (ns)0.255
Maximum Clock Rate (MHz)1333
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 4Gbit 512Mx8 1.5V 78-Pin FBGA
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