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K4B4G0846D-BCK0000
K4B4G0846D-BCK0000
DRAM Chip K4B4G0846D-BCK0000
Samsung Electronics
K4B4G0846D-BCK0000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization512Mx8
Chip Density (bit)4G
Data Bus Width (bit)8
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)8
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 4Gbit 512Mx8 1.5V
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