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K4B4G0846D-BYH9000
K4B4G0846D-BYH9000
DRAM Chip K4B4G0846D-BYH9000
Samsung Electronics
K4B4G0846D-BYH9000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
Pin Count78
AutomotiveNo
PCB changed78
Part StatusActive
Organization512Mx8
Package Width7.5
Package Length11
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)8
Operating Current (mA)59
Address Bus Width (bit)19
Maximum Access Time (ns)0.255
Maximum Clock Rate (MHz)1333
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.45
Minimum Operating Supply Voltage (V)1.283
Typical Operating Supply Voltage (V)1.35
Description
DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin FBGA
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