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K4B4G1646D-BMK0000
K4B4G1646D-BMK0000
DRAM Chip K4B4G1646D-BMK0000
Samsung Electronics
K4B4G1646D-BMK0000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization256Mx16
Chip Density (bit)4G
Data Bus Width (bit)16
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Maximum Operating Supply Voltage (V)1.45|1.575
Minimum Operating Supply Voltage (V)1.283|1.425
Typical Operating Supply Voltage (V)1.35|1.5
Description
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V/1.5V
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