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DRAM Chip K4B4G1646E-BMK0TCV
Samsung Electronics
K4B4G1646E-BMK0TCV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
EU RoHSCompliant
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
Part StatusObsolete
Organization256Mx16
Chip Density (bit)4G
Data Bus Width (bit)16
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Maximum Operating Supply Voltage (V)1.575|1.45
Minimum Operating Supply Voltage (V)1.425|1.283
Typical Operating Supply Voltage (V)1.5|1.35
Description
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V/1.5V
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