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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4B4G1646E-BYMA0CV
K4B4G1646E-BYMA0CV
DRAM Chip K4B4G1646E-BYMA0CV
Samsung Electronics
K4B4G1646E-BYMA0CV
--
Memory
DRAM Chip
K4B4G1646E-BYMA0CV.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusActive
Organization256Mx16
Package Width7.5
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)131
Address Bus Width (bit)18
Maximum Access Time (ns)0.195
Maximum Clock Rate (MHz)1866
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.45|1.575
Minimum Operating Supply Voltage (V)1.425|1.283
Typical Operating Supply Voltage (V)1.35|1.5
Description
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA
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