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K4B8G1646D-MMK00CV
K4B8G1646D-MMK00CV
DRAM Chip K4B8G1646D-MMK00CV
Samsung Electronics
K4B8G1646D-MMK00CV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization512Mx16
Chip Density (bit)8G
Data Bus Width (bit)16
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)16
Maximum Operating Supply Voltage (V)1.45|1.575
Minimum Operating Supply Voltage (V)1.283|1.425
Typical Operating Supply Voltage (V)1.35|1.5
Description
DRAM Chip DDR3L SDRAM 8Gbit 512Mx16 1.35V/1.5V
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