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DRAM Chip K4B8G1646D-MYMA000
Samsung Electronics
K4B8G1646D-MYMA000
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| DRAM Type | DDR3L SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 96 |
| Automotive | No |
| PCB changed | 96 |
| Part Status | Obsolete |
| Organization | 512Mx16 |
| Package Width | 7.5 |
| Package Length | 13.3 |
| Supplier Package | FBGA |
| Chip Density (bit) | 8G |
| Data Bus Width (bit) | 16 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 64M |
| Number of Bits/Word (bit) | 16 |
| Maximum Operating Supply Voltage (V) | 1.45|1.575 |
| Minimum Operating Supply Voltage (V) | 1.283|1.425 |
| Typical Operating Supply Voltage (V) | 1.35|1.5 |
| Description |
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