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K4E6E304EB-EGCF
K4E6E304EB-EGCF
DRAM Chip K4E6E304EB-EGCF
Samsung Electronics
K4E6E304EB-EGCF
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
DRAM TypeMobile LPDDR3 SDRAM
ECCN (US)EAR99
Pin Count178
AutomotiveNo
PCB changed178
Part StatusActive
Organization512Mx32
Package Width11
Package Length11.5
Supplier PackageFBGA
Chip Density (bit)16G
Data Bus Width (bit)32
Maximum Clock Rate (MHz)1866
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)-25
Typical Operating Supply Voltage (V)1.8|1.2
Description
DRAM Chip Mobile LPDDR3 SDRAM 16Gbit 512Mx32 1.2V/1.8V 178-Pin FBGA
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