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K4F6E3S4HM-GHCL02V
K4F6E3S4HM-GHCL02V
DRAM Chip K4F6E3S4HM-GHCL02V
Samsung Electronics
K4F6E3S4HM-GHCL02V
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
DRAM TypeMobile LPDDR4 SDRAM
ECCN (US)EAR99
Part StatusActive
Organization512Mx32
Chip Density (bit)16G
Data Bus Width (bit)32
Maximum Clock Rate (MHz)4266
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Typical Operating Supply Voltage (V)1.1|1.8
Description
DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA
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