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K4F8E304HB-MGCJ
K4F8E304HB-MGCJ
DRAM Chip K4F8E304HB-MGCJ
Samsung Electronics
K4F8E304HB-MGCJ
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR4 SDRAM
ECCN (US)EAR99
Pin Count200
AutomotiveNo
PCB changed200
Part StatusObsolete
Organization256Mx32
Package Width10
Interface TypeSSTL_2
Package Length15
Supplier PackageFBGA
Chip Density (bit)8G
Data Bus Width (bit)32
Maximum Clock Rate (MHz)3733
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Supplier Temperature GradeExtended
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Typical Operating Supply Voltage (V)1.1|1.8
Description
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin FBGA
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