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DRAM Chip K4F8E304HB-MGCJ000
Samsung Electronics
K4F8E304HB-MGCJ000
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| DRAM Type | Mobile LPDDR4 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 200 |
| Automotive | No |
| PCB changed | 200 |
| Part Status | Obsolete |
| Organization | 256Mx32 |
| Package Width | 10 |
| Interface Type | SSTL_2 |
| Package Length | 15 |
| Supplier Package | FBGA |
| Chip Density (bit) | 8G |
| Data Bus Width (bit) | 32 |
| Maximum Clock Rate (MHz) | 3733 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 32M |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Supplier Temperature Grade | Extended |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -25 |
| Typical Operating Supply Voltage (V) | 1.1|1.8 |
| Description |
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