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DRAM Chip K4FBE3D4HM-GHCL02V
Samsung Electronics
K4FBE3D4HM-GHCL02V
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| HTS | 8542.32.00.36 |
| Mounting | Surface Mount |
| DRAM Type | Mobile LPDDR4 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 200 |
| PCB changed | 200 |
| Part Status | Active |
| Organization | 1Gx32 |
| Supplier Package | FPGA |
| Chip Density (bit) | 32G |
| Data Bus Width (bit) | 32 |
| Maximum Clock Rate (MHz) | 4266 |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Maximum Operating Temperature (°C) | 105 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Operating Supply Voltage (V) | 1.1|1.8 |
| Description |
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