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DRAM Chip K4H511638B-TCB3000
Samsung Electronics
K4H511638B-TCB3000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
DRAM TypeDDR SDRAM
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Organization32Mx16
Interface TypeSSTL_2
Chip Density (bit)512M
Data Bus Width (bit)16
Operating Current (mA)405
Address Bus Width (bit)15
Maximum Access Time (ns)0.7
Maximum Clock Rate (MHz)333
Number of Internal Banks4
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)2.7
Minimum Operating Supply Voltage (V)2.3
Typical Operating Supply Voltage (V)2.5
Description
DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.5V Tray
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