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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DRAM Chip K4H511638G-LCCC000
Samsung Electronics
K4H511638G-LCCC000
--
Memory
DRAM Chip
K4H511638G-LCCC000.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR SDRAM
ECCN (US)EAR99
Pin Count66
AutomotiveNo
PCB changed66
Part StatusObsolete
Organization32Mx16
Package Width10.16
Interface TypeSSTL_2
Package Height1
Package Length22.22
Supplier PackageTSSOP-II
Chip Density (bit)512M
Data Bus Width (bit)16
Standard Package NameSOP
Operating Current (mA)255
Address Bus Width (bit)15
Maximum Access Time (ns)0.65
Maximum Clock Rate (MHz)400
Number of Internal Banks4
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)2.7
Minimum Operating Supply Voltage (V)2.5
Typical Operating Supply Voltage (V)2.6
Description
DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.6V 66-Pin TSSOP-II
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