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K4H561638H-UCB3T00
K4H561638H-UCB3T00
DRAM Chip K4H561638H-UCB3T00
Samsung Electronics
K4H561638H-UCB3T00
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.24
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR SDRAM
ECCN (US)EAR99
PackagingTray
Pin Count66
AutomotiveNo
Lead ShapeGull-wing
PCB changed66
Part StatusObsolete
Organization16Mx16
Package Width10.16
Interface TypeSSTL_2
Package Height1
Package Length22.22
Supplier PackageTSOP-II
Chip Density (bit)256M
Data Bus Width (bit)16
Standard Package NameSOP
Operating Current (mA)160
Address Bus Width (bit)15
Maximum Access Time (ns)0.7
Maximum Clock Rate (MHz)333
Number of Internal Banks4
Number of Words per Bank4M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)2.7
Minimum Operating Supply Voltage (V)2.3
Typical Operating Supply Voltage (V)2.5
Description
DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP-II Tray
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