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K4M28323PH-HG75000
K4M28323PH-HG75000
DRAM Chip K4M28323PH-HG75000
Samsung Electronics
K4M28323PH-HG75000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
DRAM TypeMobile SDRAM
ECCN (US)EAR99
Pin Count90
AutomotiveNo
Lead ShapeBall
PCB changed90
Part StatusObsolete
Organization4Mx32
Package Width8
Interface TypeLVCMOS
Package Height1(Max) - 0.25(Min)
Package Length13
Supplier PackageFBGA
Chip Density (bit)128M
Data Bus Width (bit)32
Standard Package NameBGA
Operating Current (mA)60
Address Bus Width (bit)14
Maximum Access Time (ns)9|6
Maximum Clock Rate (MHz)133
Number of Internal Banks4
Number of Words per Bank1M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Supplier Temperature GradeExtended
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip Mobile SDRAM 128Mbit 4Mx32 1.8V 90-Pin FBGA
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