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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4S161622E-TC70000
K4S161622E-TC70000
DRAM Chip K4S161622E-TC70000
Samsung Electronics
K4S161622E-TC70000
--
Memory
DRAM Chip
K4S161622E-TC70000.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
DRAM TypeSDRAM
ECCN (US)EAR99
PackagingTray
Pin Count50
AutomotiveNo
Lead ShapeGull-wing
PCB changed50
Part StatusObsolete
Organization1Mx16
Package Width10.16
Interface TypeLVTTL
Package Height1
Package Length20.95
Supplier PackageTSOP-II
Chip Density (bit)16M
Data Bus Width (bit)16
Standard Package NameSOP
Operating Current (mA)140
Address Bus Width (bit)12
Maximum Access Time (ns)5.5|6
Maximum Clock Rate (MHz)143
Number of Internal Banks2
Number of Words per Bank512K
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)3
Typical Operating Supply Voltage (V)3.3
Description
DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 50-Pin TSOP-II Tray
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