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K4S560832H-UC75T00
K4S560832H-UC75T00
DRAM Chip K4S560832H-UC75T00
Samsung Electronics
K4S560832H-UC75T00
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeSDRAM
ECCN (US)EAR99
PackagingTape and Reel
Pin Count54
AutomotiveNo
Lead ShapeGull-wing
PCB changed54
Part StatusObsolete
Organization32Mx8
Package Width10.16
Interface TypeLVTTL
Package Height1
Package Length22.62(Max)
Supplier PackageTSOP-II
Chip Density (bit)256M
Process TechnologyCMOS
Data Bus Width (bit)8
Standard Package NameSOP
Operating Current (mA)100
Address Bus Width (bit)15
Maximum Access Time (ns)6|5.4
Maximum Clock Rate (MHz)133
Number of Internal Banks4
Number of Words per Bank8M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)3
Typical Operating Supply Voltage (V)3.3
Description
DRAM Chip SDRAM 256Mbit 32Mx8 3.3V 54-Pin TSOP-II T/R
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