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K4S641633F-GN75000
K4S641633F-GN75000
DRAM Chip K4S641633F-GN75000
Samsung Electronics
K4S641633F-GN75000
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
DRAM TypeMobile SDRAM
ECCN (US)EAR99
Pin Count54
AutomotiveNo
Lead ShapeBall
PCB changed54
Part StatusObsolete
Organization4Mx16
Package Width8
Interface TypeLVCMOS
Package Height0.6
Package Length8
Supplier PackageCSP
Chip Density (bit)64M
Data Bus Width (bit)16
Standard Package NameCSP
Operating Current (mA)90
Address Bus Width (bit)14
Maximum Access Time (ns)7|5.4
Maximum Clock Rate (MHz)133
Number of Internal Banks4
Number of Words per Bank1M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeExtended
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3
Description
DRAM Chip Mobile SDRAM 64Mbit 4Mx16 3V 54-Pin CSP
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