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K4T1G084QG-BCE7000
K4T1G084QG-BCE7000
DRAM Chip K4T1G084QG-BCE7000
Samsung Electronics
K4T1G084QG-BCE7000
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
Pin Count60
AutomotiveNo
PCB changed60
Part StatusObsolete
Organization128Mx8
Package Width7.5
Interface TypeSSTL_1.8
Package Length9.5
Supplier PackageFBGA
Chip Density (bit)1G
Data Bus Width (bit)8
Operating Current (mA)70
Address Bus Width (bit)17
Maximum Access Time (ns)0.4
Maximum Clock Rate (MHz)800
Number of Internal Banks8
Number of Words per Bank16M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA
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