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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4T1G164QE-HIE6000
K4T1G164QE-HIE6000
DRAM Chip K4T1G164QE-HIE6000
Samsung Electronics
K4T1G164QE-HIE6000
--
Memory
DRAM Chip
K4T1G164QE-HIE6000.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
PackagingTray
Pin Count84
AutomotiveNo
Lead ShapeBall
PCB changed84
Part StatusObsolete
Organization64Mx16
Package Width7.5
Interface TypeSSTL_1.8
Package Length12.5
Supplier PackageFBGA
Chip Density (bit)1G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)115
Address Bus Width (bit)16
Maximum Access Time (ns)0.45
Maximum Clock Rate (MHz)667
Number of Internal Banks8
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray
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