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K4X56323PI-8GC3000
K4X56323PI-8GC3000
DRAM Chip K4X56323PI-8GC3000
Samsung Electronics
K4X56323PI-8GC3000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile-DDR SDRAM
ECCN (US)EAR99
PackagingTray
Pin Count90
AutomotiveNo
Lead ShapeBall
PCB changed90
Part StatusObsolete
Organization8Mx32
Package Width8
Interface TypeLVCMOS
Package Height1(Max) - 0.25(Min)
Package Length13
Supplier PackageFBGA
Chip Density (bit)256M
Data Bus Width (bit)32
Standard Package NameBGA
Operating Current (mA)110
Address Bus Width (bit)14
Maximum Access Time (ns)6|8
Maximum Clock Rate (MHz)266
Number of Internal Banks4
Number of Words per Bank2M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Supplier Temperature GradeExtended
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip Mobile-DDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin FBGA Tray
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