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DRAM Chip MT40A1G8WE-083E AAT:B
Micron Technology
MT40A1G8WE-083E AAT:B
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| DRAM Type | DDR4 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 78 |
| Automotive | Yes |
| Lead Shape | Ball |
| PCB changed | 78 |
| Part Status | Obsolete |
| Organization | 1Gx8 |
| Supplier Package | FBGA |
| Chip Density (bit) | 8G |
| Process Technology | CMOS |
| Data Bus Width (bit) | 8 |
| Standard Package Name | BGA |
| Operating Current (mA) | 140 |
| Address Bus Width (bit) | 18 |
| Maximum Access Time (ns) | 0.175 |
| Maximum Clock Rate (MHz) | 2400 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 64M |
| Number of Bits/Word (bit) | 8 |
| Number of I/O Lines (bit) | 8 |
| Supplier Temperature Grade | Automotive |
| Maximum Operating Temperature (°C) | 105 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 1.26 |
| Minimum Operating Supply Voltage (V) | 1.14 |
| Typical Operating Supply Voltage (V) | 1.2 |
| Description |
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