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MT46H128M16LFDD-48 IT:C TR
MT46H128M16LFDD-48 IT:C TR
DRAM Chip MT46H128M16LFDD-48 IT:C TR
Micron Technology
MT46H128M16LFDD-48 IT:C TR
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR SDRAM
ECCN (US)EAR99
Pin Count60
AutomotiveNo
Lead ShapeBall
PCB changed60
Part StatusActive
Organization128Mx16
Package Width8
Interface TypeLVCMOS
Package Height0.55(Min)
Package Length9
Supplier PackageVFBGA
Chip Density (bit)2G
Process TechnologyCMOS
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)130
Address Bus Width (bit)16
Maximum Access Time (ns)6.5|5
Maximum Clock Rate (MHz)208
Number of Internal Banks4
Number of Words per Bank32M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip Mobile LPDDR SDRAM 2Gbit 128Mx16 1.8V 60-Pin VFBGA
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