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MT46H128M32L2KQ-6 WT:B
MT46H128M32L2KQ-6 WT:B
DRAM Chip MT46H128M32L2KQ-6 WT:B
Micron Technology
MT46H128M32L2KQ-6 WT:B
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR SDRAM
ECCN (US)EAR99
Pin Count168
AutomotiveNo
Lead ShapeBall
PCB changed168
Part StatusObsolete
Organization128Mx32
Package Width12
Interface TypeLVCMOS
Package Height0.34(Min)
Package Length12
Supplier PackageWFBGA
Chip Density (bit)4G
Data Bus Width (bit)32
Standard Package NameBGA
Operating Current (mA)140
Maximum Access Time (ns)6.5|5
Maximum Clock Rate (MHz)166
Number of Internal Banks4
Number of Words per Bank32M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Supplier Temperature GradeWireless
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip Mobile LPDDR SDRAM 4Gbit 128Mx32 1.8V 168-Pin WFBGA
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