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DRAM Chip MT46H256M32R4JV-5 WT:B
Micron Technology
MT46H256M32R4JV-5 WT:B
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| DRAM Type | Mobile LPDDR SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 168 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 168 |
| Part Status | Obsolete |
| Organization | 256Mx32 |
| Package Width | 12 |
| Interface Type | LVCMOS |
| Package Height | 0.59(Min) |
| Package Length | 12 |
| Supplier Package | VFBGA |
| Chip Density (bit) | 8G |
| Data Bus Width (bit) | 32 |
| Standard Package Name | BGA |
| Operating Current (mA) | 150 |
| Maximum Access Time (ns) | 6.5|5 |
| Maximum Clock Rate (MHz) | 200 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 64M |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Supplier Temperature Grade | Wireless |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Supply Voltage (V) | 1.95 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Description |
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