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MT47H128M8SH-25E IT:M TR
MT47H128M8SH-25E IT:M TR
DRAM Chip MT47H128M8SH-25E IT:M TR
Micron Technology
MT47H128M8SH-25E IT:M TR
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
PackagingTape and Reel
Pin Count60
AutomotiveNo
Lead ShapeBall
PCB changed60
Part StatusActive
Organization128Mx8
Package Width8
Interface TypeSSTL_18
Package Height0.72(Min) + 0.16
Package Length10
Supplier PackageFBGA
Chip Density (bit)1G
Process TechnologyCMOS
Data Bus Width (bit)8
Standard Package NameBGA
Operating Current (mA)120
Address Bus Width (bit)17
Maximum Access Time (ns)0.4
Maximum Clock Rate (MHz)800
Number of Internal Banks8
Number of Words per Bank16M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA T/R
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