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MT47H256M8EB-3:C
MT47H256M8EB-3:C
DRAM Chip MT47H256M8EB-3:C
Micron Technology
MT47H256M8EB-3:C
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
PackagingTray
Pin Count60
AutomotiveNo
Lead ShapeBall
PCB changed60
Part StatusObsolete
Organization256Mx8
Package Width9
Interface TypeSSTL_18
Package Height1.2(Max) - 0.25(Min)
Package Length11.5
Supplier PackageFBGA
Chip Density (bit)2G
Process TechnologyCMOS
Data Bus Width (bit)8
Standard Package NameBGA
Operating Current (mA)110
Address Bus Width (bit)18
Maximum Access Time (ns)0.45
Maximum Clock Rate (MHz)667
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 2Gbit 256Mx8 1.8V 60-Pin FBGA Tray
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