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MT47H256M8THN-25E IT:H
MT47H256M8THN-25E IT:H
DRAM Chip MT47H256M8THN-25E IT:H
Micron Technology
MT47H256M8THN-25E IT:H
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
PackagingTray
Pin Count63
AutomotiveNo
Lead ShapeBall
PCB changed63
Part StatusUnconfirmed
Organization256Mx8
Package Width8
Interface TypeSSTL_18
Package Height0.8
Package Length10
Supplier PackageFBGA
Chip Density (bit)2G
Process TechnologyCMOS
Data Bus Width (bit)8
Standard Package NameBGA
Operating Current (mA)132
Address Bus Width (bit)17
Maximum Access Time (ns)0.4
Maximum Clock Rate (MHz)800
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 2Gbit 256Mx8 1.8V 63-Pin FBGA Tray
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