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MT47H512M4THN-3:H
MT47H512M4THN-3:H
DRAM Chip MT47H512M4THN-3:H
Micron Technology
MT47H512M4THN-3:H
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
PackagingTray
Pin Count63
AutomotiveNo
Lead ShapeBall
PCB changed63
Part StatusObsolete
Organization512Mx4
Package Width8
Interface TypeSSTL_18
Package Height0.8
Package Length10
Supplier PackageFBGA
Chip Density (bit)2G
Process TechnologyCMOS
Data Bus Width (bit)4
Standard Package NameBGA
Operating Current (mA)127
Address Bus Width (bit)17
Maximum Access Time (ns)0.45
Maximum Clock Rate (MHz)667
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)4
Number of I/O Lines (bit)4
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 2Gbit 512Mx4 1.8V 63-Pin FBGA Tray
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