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DRAM Chip MT53D512M32D2DS-046 WT:D
Micron Technology
MT53D512M32D2DS-046 WT:D
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| DRAM Type | Mobile LPDDR4 SDRAM |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Active |
| Organization | 512Mx32 |
| Chip Density (bit) | 16G |
| Process Technology | CMOS |
| Data Bus Width (bit) | 32 |
| Operating Current (mA) | 360 |
| Address Bus Width (bit) | 19 |
| Maximum Access Time (ns) | 3.5 |
| Maximum Clock Rate (MHz) | 4266 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 32M |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Supply Voltage (V) | 1.95|1.17 |
| Minimum Operating Supply Voltage (V) | 1.7|1.06 |
| Typical Operating Supply Voltage (V) | 1.8|1.1 |
| Description |
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