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MT53E512M32D1ZW-046 IT:B
MT53E512M32D1ZW-046 IT:B
DRAM Chip MT53E512M32D1ZW-046 IT:B
Micron Technology
MT53E512M32D1ZW-046 IT:B
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR4 SDRAM
ECCN (US)EAR99
Pin Count200
PCB changed200
Part StatusActive
Organization512Mx32
Package Width10
Interface TypeLVSTL
Package Height0.64
Package Length14.5
Supplier PackageTFBGA
Chip Density (bit)16G
Data Bus Width (bit)32
Standard Package NameBGA
Operating Current (mA)400
Address Bus Width (bit)19
Maximum Access Time (ns)3.5
Maximum Clock Rate (MHz)4266
Number of Internal Banks16
Number of Words per Bank32M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.17|1.95
Minimum Operating Supply Voltage (V)1.06|1.7
Typical Operating Supply Voltage (V)1.1|1.8
Description
DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray
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