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2N6059
2N6059
Darlington BJT 2N6059
Microchip Technology
2N6059
--
Diodes, Transistors and Thyristors
Darlington BJT
2N6059.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain1000@1A@3V|1000@6A@3V|150@12A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)4@120mA@12A
Maximum Continuous DC Collector Current (A)12
Maximum Collector-Emitter Saturation Voltage (V)2@24mA@6A|3@120mA@12A
Description
Trans Darlington NPN 100V 12A 150000mW 3-Pin(2+Tab) TO-3 Bag
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