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2N6286G
2N6286G
Darlington BJT 2N6286G
onsemi
2N6286G
--
Diodes, Transistors and Thyristors
Darlington BJT
2N6286G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Maximum DC Current Gain18000@10A@3V
Minimum DC Current Gain100@20A@3V|750@10A@3V
Maximum Base Current (A)0.5
Number of Elements per Chip1
Minimum DC Current Gain Range<500|500 to 3600
Maximum Power Dissipation (mW)160000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Typical Transition Frequency (MHz)4(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Typical Current Gain Bandwidth (MHz)4(Min)
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)4@200mA@20A
Maximum Continuous DC Collector Current (A)20
Maximum Collector-Emitter Saturation Voltage (V)3@200mA@20A|2@40mA@10A
Description
Trans Darlington PNP 80V 20A 160000mW 3-Pin(2+Tab) TO-3 Tray
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