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Darlington BJT 2N6353
Microchip Technology
2N6353
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Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Configuration | Single |
| Package Width | 17.78(Max) |
| Package Height | 8.64(Max) |
| Package Length | 31.79(Max) |
| Supplier Package | TO-66 |
| Standard Package Name | TO |
| Minimum DC Current Gain | 1000@1A@5V|1000@5A@5V|200@10A@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum Emitter Base Voltage (V) | 12 |
| Maximum Collector Base Voltage (V) | 150 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 150 |
| Maximum Continuous DC Collector Current (A) | 5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 2.5@10mA@5A |
| Description |
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