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Darlington BJT 2N7371
Microchip Technology
2N7371
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 6.6 |
| Package Height | 20.19(Max) - 6.48 |
| Package Length | 13.72 |
| Supplier Package | TO-254 |
| Standard Package Name | TO |
| Minimum DC Current Gain | 1000@6A@3V|150@12A@3V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 100000 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 4@120mA@12A |
| Maximum Continuous DC Collector Current (A) | 12 |
| Maximum Collector-Emitter Saturation Voltage (V) | 3@120mA@12A |
| Description |
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