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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2N7371JAN
2N7371JAN
Darlington BJT 2N7371JAN
Microchip Technology
2N7371JAN
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Diodes, Transistors and Thyristors
Darlington BJT
2N7371JAN.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypePNP
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width6.6
Package Height20.19(Max) - 6.48
Package Length13.72
Supplier PackageTO-254
Standard Package NameTO
Minimum DC Current Gain1000@6A@3V|150@12A@3V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)100000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)4@120mA@12A
Maximum Continuous DC Collector Current (A)12
Maximum Collector-Emitter Saturation Voltage (V)3@120mA@12A
Description
Trans Darlington PNP 100V 12A 100000mW 3-Pin(3+Tab) TO-254 Tray
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