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2SA1575E-TD-E
2SA1575E-TD-E
Darlington BJT 2SA1575E-TD-E
onsemi
2SA1575E-TD-E
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Diodes, Transistors and Thyristors
Darlington BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.5
Package Height1.5
Package Length4.5
Supplier PackageSOT-89
Standard Package NameTO-243-AA
Minimum DC Current Gain100@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Current Gain Bandwidth (MHz)400
Maximum Collector-Emitter Voltage (V)200
Maximum Collector Cut-Off Current (uA)0.1
Maximum Base Emitter Saturation Voltage (V)1@2mA@20mA
Maximum Continuous DC Collector Current (A)0.1
Maximum Collector-Emitter Saturation Voltage (V)1@2mA@20mA
Description
Trans Darlington PNP 200V 0.1A 500mW 4-Pin(3+Tab) SOT-89
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