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2SD1953
2SD1953
Darlington BJT 2SD1953
onsemi
2SD1953
--
Diodes, Transistors and Thyristors
Darlington BJT
2SD1953.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.7
Package Height11
Package Length8
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain10000@0.5A@3V|2000@1A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)120
Maximum Collector Cut-Off Current (uA)10
Maximum Base Emitter Saturation Voltage (V)2@2mA@1A
Maximum Continuous DC Collector Current (A)1.5
Maximum Collector-Emitter Saturation Voltage (V)1.5@2mA@1A
Description
Trans Darlington NPN 120V 1.5A 1000mW 3-Pin TO-126
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