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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2ST501T
2ST501T
Darlington BJT 2ST501T
STMicroelectronics
2ST501T
--
Diodes, Transistors and Thyristors
Darlington BJT
2ST501T.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width4.6(Max)
Package Height9.15(Max)
Package Length10.4(Max)
Supplier PackageTO-220AB
Process TechnologyBipolar
Standard Package NameTO-220
Minimum DC Current Gain2000@2A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)100000
Maximum Emitter Base Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)350
Maximum Collector Cut-Off Current (uA)100
Maximum Base Emitter Saturation Voltage (V)2@2mA@2A
Maximum Continuous DC Collector Current (A)4
Maximum Collector-Emitter Saturation Voltage (V)1.5@2mA@2A
Description
Trans Darlington NPN 350V 4A 100000mW 3-Pin(3+Tab) TO-220AB Tube
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