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BSR52,126
BSR52,126
Darlington BJT BSR52,126
NXP
BSR52,126
--
Diodes, Transistors and Thyristors
Darlington BJT
BSR52,126.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MountingThrough Hole
PackagingAmmo
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Supplier PackageSPT
Minimum DC Current Gain1000@150mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)90
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Current Gain Bandwidth (MHz)200
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)2.2@4mA@1A
Maximum Continuous DC Collector Current (A)1
Maximum Collector-Emitter Saturation Voltage (V)1.6@4mA@1A
Description
Trans Darlington NPN 80V 1A 830mW 3-Pin SPT Ammo
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