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Darlington BJT BST52,115
Nexperia
BST52,115
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Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 2.6(Max) |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Supplier Package | SOT-89 |
| Minimum DC Current Gain | 1000@150mA@10V|2000@500mA@10V |
| Maximum Base Current (A) | 0.1 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 500 to 3600 |
| Maximum Power Dissipation (mW) | 1300 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 90 |
| Typical Transition Frequency (MHz) | 200 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 150 |
| Typical Current Gain Bandwidth (MHz) | 200 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Collector Cut-Off Current (uA) | 0.05 |
| Maximum Base Emitter Saturation Voltage (V) | 1.9@0.5mA@500mA |
| Maximum Continuous DC Collector Current (A) | 1 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.3@0.5mA@500mA |
| Description |
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